LCWS 2004

Session

Tracking and Vertexing: Silicon R&D II

21 Apr 2004, 09:30

Le Carré des Sciences, Paris- France

Description

Conveners:M.Winter, HB. Park, D.Karlen, B.Schumm

66. Status of the SOI monolithic active pixel detector development

Halina Niemiec

21/04/2004, 09:30

The monolithic active pixel detector realized in the Silicon on Insulator technology (SOI) is a novel solution of ionising radiation detectors, which allows integration of the particle detector and readout electronics in one entity by the utilization of the both silicon layers (support and device layers) of a wafer-bonded SOI substrate. First test structures of the SOI detectors have been...

64. The Integrated Pixel Tracker

Miran Djordjevic

21/04/2004, 09:45

We propose the Integrated Pixel Tracker (IPT), a device that is part of the vertex detector based on the MIMOSA CMOS pixel sensor. The IPT takes raw data from the pixel sensors, and applies real-time data reduction in two steps by means of hardware: cluster collection on a local level and track reconstruction on a global level. Only the track features are stored on disk. We also discuss our...

65. Processing of Ultra Thin Silicon Sensors for Future e+e- Linear Collider Experiments

Ladislav Andricek

21/04/2004, 09:55

A new generation of DEPFET active pixel sensors with 25 um pixel size is currently being developed to meet the requirements in the point measurement resolution and multiple track separation. To minimize the influence of the multiple scattering on the impact parameter resolution, the sensors have to be made as thin as possible. We will present a technology based on direct wafer bonding and deep...

68. Report of silicon R&D activities in Korea

Jik Lee

21/04/2004, 10:10

We will report on the silicon R&D activities in Korea for the future Linear Collider. The activities includes design, production and simulation of double-side silicon strip sensors. The charateristics of our first prototype sensors and the results of simulation will be presented.

69. Irradiation tests of GaAs:Cr detectors in Protvino and prospects for LC tracking

Yuri Arestov

21/04/2004, 10:25

Expected properties of a resistive structure of gallium arsenide doped by Chromium, GaAs:Cr, are discussed. Pad GaAs:Cr detectors of the size 10mm*10mm are presented as an output of new technologies developed in Tomsk. Results of the recent tests of radiation hardness of these detectors in hadron and gamma beams are reported. Further plans for direct comparison of GaAs:Cr detectors and Si...

67. R&D Towards a Short-Shaping Time Silicon Tracker at Santa Cruz

Bruce Schumm

21/04/2004, 10:35

We present the progress of the hardware program on short-shaping time microstrip readout at UC Santa Cruz.

70. Latest Progresses on the R&D on Silicon Tracking for the LC

Aurore Savoy-Navarro

21/04/2004, 10:50

Latest results, within the SiLC R&D program, on the measurements achieved with a long ladder prototype with microstrips of length up to 2m24, on the design and simulation studies of a complete FE and readout electronics chain, on the CAD mechanical design of such a tracking system and related integration issues, on the thermo-mechanical studies are presented as well as the near future prospects.